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CTLDM8120-M832D

Central Semiconductor
Part Number CTLDM8120-M832D
Manufacturer Central Semiconductor
Description SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
Published Mar 14, 2016
Detailed Description CTLDM8120-M832D SURFACE MOUNT DUAL, P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DE...
Datasheet PDF File CTLDM8120-M832D PDF File

CTLDM8120-M832D
CTLDM8120-M832D

Overview
CTLDM8120-M832D SURFACE MOUNT DUAL, P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w.
c e n t r a l s e m i .
c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM8120-M832D is an Enhancement-mode Dual P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.
This MOSFET offers Low rDS(ON) and Low Threshold Voltage.
TLM832D CASE APPLICATIONS: • Switching Circuits • DC - DC Converters • Battery powered portable devices MARKING CODE: CFV • Device is Halogen Free by design FEATURES: • ESD protection up to 2kV • Low rDS(ON) (0.
24Ω MAX @ VGS=1.
8V) • High current (ID=0.
95A) • Logic level compatibility MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Continuous Drain Current, t<5.
0s Continuous Source Current (Body Diode) Maximum Pulsed Drain Current, tp=10μs Maximum Pulsed Source Current, tp=10μs Power Dissipation (Note 1) Operating and Storage Junction Temperature Thermal Resistance (Note 1) SYMBOL VDS VGS ID ID IS IDM ISM PD TJ, Tstg ΘJA 20 8.
0 0.
86 0.
95 0.
36 4.
0 4.
0 1.
65 -65 to +150 76 UNITS V V A A A A A W °C °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IGSSF, IGSSR VGS=8.
0V, VDS=0 1.
0 50 nA IDSS VDS=20V, VGS=0 5.
0 500 nA BVDSS VGS=0, ID=250μA 20 24 V VGS(th) VDS=VGS, ID=250μA 0.
45 0.
76 1.
0 V VSD VGS=0, IS=360mA 0.
9 V rDS(ON) VGS=4.
5V, ID=0.
95A 0.
085 0.
150 Ω rDS(ON) VGS=4.
5V, ID=0.
77A 0.
085 0.
142 Ω rDS(ON) VGS=2.
5V, ID=0.
67A 0.
130 0.
200 Ω rDS(ON) VGS=1.
8V, ID=0.
2A 0.
190 0.
240 Ω Qg(tot) VDS=10V, VGS=4.
5V, ID=1.
0A 3.
56 nC Qgs VDS=10V, VGS=4.
5V, ID=1.
0A 0.
36 nC Qgd VDS=10V, VGS=4.
5V, ID=1.
0A 1.
52 nC gFS VDS=10V, ID=810mA 2.
0 S Crss VDS=16V, VGS=0, f=1.
0MHz 80 pF Ciss VDS=16V, VGS=0, f=1.
0MHz 200 pF Coss VDS=16V, VGS=0, f=1.
0MHz 60 pF ton VDD=10V, VGS=4.
5V, ID=0.
95A, RG=6.
0Ω 20 ns toff V...


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