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CTLDM8002A-M621

Central Semiconductor
Part Number CTLDM8002A-M621
Manufacturer Central Semiconductor
Description SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
Published Mar 14, 2016
Detailed Description CTLDM8002A-M621 SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTIO...
Datasheet PDF File CTLDM8002A-M621 PDF File

CTLDM8002A-M621
CTLDM8002A-M621

Overview
CTLDM8002A-M621 SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET w w w.
c e n t r a l s e m i .
c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM8002A-M621 is a silicon P-Channel enhancement-mode MOSFET in a small, thermally efficient, TLM™ 2x1mm package.
MARKING CODE: CN TLM621 CASE APPLICATIONS: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Equipment FEATURES: • Low rDS(on) • Low VDS(on) • Low Threshold Voltage • Fast Switching • Logic Level Compatible • Small TLM™ 2x1mm Package MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current Power Dissipation (Note 1) Operating and Storage Junction Temperature Thermal Resistance (Note 1) SYMBOL VDS VDG VGS ID IS IDM ISM PD TJ, Tstg ΘJA 50 50 20 280 280 1.
5 1.
5 0.
9 -65 to +150 139 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IGSSF, IGSSR VGS=20V, VDS=0 IDSS VDS=50V, VGS=0 IDSS VDS=50V, VGS=0, TJ=125°C ID(ON) VGS=10V, VDS=10V 500 BVDSS VGS=0, ID=10μA 50 VGS(th) VDS=VGS, ID=250μA 1.
0 VDS(ON) VGS=10V, ID=500mA VDS(ON) VGS=5.
0V, ID=50mA VSD VGS=0, IS=115mA rDS(ON) VGS=10V, ID=500mA rDS(ON) VGS=10V, ID=500mA, TJ=125°C rDS(ON) VGS=5.
0V, ID=50mA rDS(ON) VGS=5.
0V, ID=50mA, TJ=125°C gFS VDS=10V, ID=200mA 200 Crss VDS=25V, VGS=0, f=1.
0MHz Ciss VDS=25V, VGS=0, f=1.
0MHz Coss VDS=25V, VGS=0, f=1.
0MHz Note: (1) FR-4 Epoxy PCB with copper mounting pad area of 33mm2.
MAX 100 1.
0 500 2.
5 1.
5 0.
15 1.
3 2.
5 4.
0 3.
0 5.
0 7.
0 70 15 UNITS V V V mA mA A A W °C °C/W UNITS nA μA μA mA V V V V V Ω Ω Ω Ω mS pF pF pF R2 (6-February 2015) CTLDM8002A-M621 SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP MAX Qg(tot) VDS=25V, VGS=4.
5V, ID=100mA 0.
72 Qgs VDS=...


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