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CWDM305PD

Central Semiconductor
Part Number CWDM305PD
Manufacturer Central Semiconductor
Description Dual P-Channel MOSFET
Published Mar 14, 2016
Detailed Description CWDM305PD SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTIO...
Datasheet PDF File CWDM305PD PDF File

CWDM305PD
CWDM305PD


Overview
CWDM305PD SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w.
c e n t r a l s e m i .
c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM305PD is a dual high current P-channel enhancement-mode silicon MOSFET manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications.
This MOSFET offers high current, low rDS(ON), low threshold voltage, and low gate charge.
SOIC-8 CASE MARKING CODE: C503 APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment FEATURES: • Low rDS(ON) (83mΩ MAX @ VGS=5.
0V) • High current (ID=5.
3A) MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VDS VGS ID IDM PD TJ, Tstg ΘJA 30 16 5.
3 21.
2 2.
0 -55 to +150 62.
5 UNITS V V A A W °C °C/W ELECTRICAL CHARACTERISTICS ...



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