DatasheetsPDF.com

RF301BM2S

Rohm
Part Number RF301BM2S
Manufacturer Rohm
Description Super Fast Recovery Diode
Published Mar 16, 2016
Detailed Description Super Fast Recovery Diode RF301BM2S Data Sheet lSerise Standard Fast Recovery lDimensions (Unit : mm) lLand Size Fig...
Datasheet PDF File RF301BM2S PDF File

RF301BM2S
RF301BM2S


Overview
Super Fast Recovery Diode RF301BM2S Data Sheet lSerise Standard Fast Recovery lDimensions (Unit : mm) lLand Size Figure (Unit : mm) 6.
0 3.
0 2.
0 6.
0 lApplication General rectification lFeatures 1) Low switching loss 2) Low forward voltage lConstruction Silicon epitaxial planar type 1 ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date lTaping Dimensions (Unit : mm) 2.
0±0.
05 4.
0±0.
1 8.
0±0.
1 1.
6 1.
6 TO-252 2.
3 2.
3 lStructure Cathode φ 1.
55±0.
1  f 1.
 5 5 00.
1 Open Anode 0.
4±0.
1 2.
5±0.
1 TL 10.
1±0.
1 16.
0±0.
2 10.
1±0.
1 13.
5±0.
2 7.
5±0.
05 0~0.
5 6.
8±0.
1 8.
0±0.
1 fφ3.
30.
00±.
10.
1 2.
7±0.
2 lAbsolute Maximum Ratings (Ta= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.
5 200 V Reverse voltage VR Direct voltage 200 V Average rectified foward current Io 60Hz half sin wave , Resistive load 3A Forward current surge peak IFSM 60Hz half sin wave ,Non-repetitive at Tj=25°C 40 A Operating junction temperature Tj - 150 °C Storage temperature Tstg - -55 to +150 °C lElectrical Characteristics (Tj = 25°C) Parameter Symbol Conditions Min.
Typ.
Max.
Unit Forward voltage Reverse current Reverse recovery time Thermal resistance VF IR trr Rth(j-c) IF=3A VR=200V IF=0.
5A, IR=1A, Irr=0.
25×IR Junction to case - 0.
85 0.
93 V - 0.
05 10 mA - 13 25 ns - - 6.
0 °C / W www.
rohm.
com © 2014 ROHM Co.
, Ltd.
All rights reserved.
1/4 2014.
07 - Rev.
A RF301BM2S lElectrical Characteristic Curves Data Sheet FORWARD CURRENT : IF(A) 100 10 1 Tj = 150°C Tj = 125°C 0.
1 Tj = 75°C 0.
01 0 Tj = 25°C 200 400 600 800 1000 1200 1400 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE CURRENT : IR(nA) 10000 1000 100 Tj = 150°C Tj = 125°C Tj = 75°C 10 Tj = 25°C 1 0.
1 0 50 100 150 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 200 CAPACITANCE BETWEEN TERMINALS : Ct(pF) PEAK SURGE FORWARD CURRENT : IFSM(A) 1000 100 f = 1MHz Ta = 25°C 1000 100 IFSM 8.
3ms 8.
3ms 1cyc.
10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE : V...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)