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RCJ220N25

Rohm
Part Number RCJ220N25
Manufacturer Rohm
Description Power MOSFET
Published Mar 17, 2016
Detailed Description RCJ220N25 Nch 250V 22A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 250V 140m 22A 166W Features 1) Low on-resi...
Datasheet PDF File RCJ220N25 PDF File

RCJ220N25
RCJ220N25


Overview
RCJ220N25 Nch 250V 22A Power MOSFET Datasheet VDSS RDS(on) (Max.
) ID PD 250V 140m 22A 166W Features 1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested Application Switching Power Supply Automotive Motor Drive Automotive Solenoid Drive Absolute maximum ratings(Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Tc = 25°C Tc = 100°C Gate - Source voltage Avalanche energy, single pulse Avalanche current Power dissipation Junction temperature Tc = 25°C Ta = 25°C *4 Range of storage temperature Outline (2) LPT(S) (SC-83) (1) (3) Inner circuit ∗1 (1) Gate (2) Drain (3) Source (1) (2) (3) 1 BODY DIODE Packaging specifications Packaging Reel size (mm) Tape width (mm) Type Quantity (pcs) Taping code Marking Taping 330 24 1,000 TL RCJ220N25 Symbol Value Unit VDSS 250 V ID *1 22 A ID *1 11.
9 A ID,pulse *2 88 A VGSS 30 V EAS *3 36.
8 mJ IAR *3 11 A PD 166 W PD 1.
56 W Tj 150 °C Tstg 55 to 150 °C www.
rohm.
com © 2015 ROHM Co.
, Ltd.
All rights reserved.
1/12 2019.
05 - Rev.
C RCJ220N25 Thermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient *4 Soldering temperature, wavesoldering for 10s Data Sheet Symbol RthJC RthJA Tsold Values Unit Min.
Typ.
Max.
- - 0.
75 °C/W - - 80 °C/W - - 265 °C Electrical characteristics(Ta = 25°C) Parameter Symbol Conditions Values Unit Min.
Typ.
Max.
Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 250 - VDS = 250V, VGS = 0V Zero gate voltage drain current IDSS - - Tj = 25°C - V 25 A Gate - Source leakage current IGSS VGS = 30V, VDS = 0V - Gate threshold voltage VGS (th) VDS = 10V, ID = 1mA 3.
0 - 100 nA - 5.
0 V Static drain - source on - state resistance VGS = 10V, ID = 11A RDS(on) *5 VGS = 10V, ID = 11A Tj = 125°C ...



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