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DMN2004TK

Diodes
Part Number DMN2004TK
Manufacturer Diodes
Description N-Channel MOSFET
Published Mar 18, 2016
Detailed Description NEW PRODUCT Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ...
Datasheet PDF File DMN2004TK PDF File

DMN2004TK
DMN2004TK

Overview
NEW PRODUCT Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected up to 2kV • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 standards for High Reliability SOT-523 ESD PROTECTED TO 2kV Top View DMN2004TK N-CHANNEL ENHANCEMENT MODE MOSFET Mechanical Data • Case: SOT-523 • Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Weight: 0.
002 grams (approximate) Drain Gate Gate Protection Diode Source Equivalent Circuit D GS Top View Ordering Information (Note 3) Notes: Part Number DMN2004TK-7 Case SOT-523 1.
No purposefully added lead.
2.
Diodes Inc.
’s “Green” policy can be found on our website at http://www.
diodes.
com.
3.
For packaging details, go to our website at http://www.
diodes.
com.
Packaging 3000/Tape & Reel Marking Information NAB YM NAB = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2006 T Jan Feb 12 2007 U Mar 3 2008 V Apr May 45 2009 W Jun Jul 67 2010 X Aug 8 Sep 9 2011 Y Oct O 2012 Z Nov Dec ND DMN2004TK Document number: DS30936 Rev.
5 - 2 1 of 6 www.
diodes.
com November 2010 © Diodes Incorporated NEW PRODUCT DMN2004TK Maximum Ratings @TA = 25°C unless otherwise specified Drain-Source Voltage Characteristic Gate-Source Voltage Drain Current (Note 4) Steady State Pulsed Drain Current (Note 5) TA = 25°C TA = 85°C Symbol VDSS VGSS ID IDM Value 20 ±8 540 390 1.
5 Units V V mA A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient Operating and Storage Temperature...


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