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BFP740ESD

Infineon
Part Number BFP740ESD
Manufacturer Infineon
Description NPN Transistor
Published Mar 18, 2016
Detailed Description BFP740ESD SiGe:C NPN RF bipolar transistor Product description The BFP740ESD is a wideband NPN RF heterojunction bipola...
Datasheet PDF File BFP740ESD PDF File

BFP740ESD
BFP740ESD

Overview
BFP740ESD SiGe:C NPN RF bipolar transistor Product description The BFP740ESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with an integrated ESD protection.
Feature list • Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits • NFmin = 0.
65 dB at 2.
4 GHz and 0.
9 dB at 5.
5 GHz, 3 V, 6 mA • High gain Gms = 25.
5 dB at 2.
4 GHz and Gma = 18.
5 dB at 5.
5 GHz, 3 V, 25 mA • OIP3 = 22 dBm at 5.
5 GHz, 3 V, 25 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications • Wireless communications: WLAN, WiMax and ...


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