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BF5020W

Infineon
Part Number BF5020W
Manufacturer Infineon
Description Silicon N-Channel MOSFET Tetrode
Published Mar 18, 2016
Detailed Description Silicon N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- and VHF - tuners with 3 V up to 5 V su...
Datasheet PDF File BF5020W PDF File

BF5020W
BF5020W

Overview
Silicon N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- and VHF - tuners with 3 V up to 5 V supply voltage • Integrated gate protection diodes • Excellent noise figure • High gain, high forward transadmittance • Improved cross modulation at gain reduction • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BF5020.
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3 4 2 1 AGC G2 HF G1 Input RG1 VGG Drain GND ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration BF5020 SOT143 1 = S 2 = D 3 = G2 4 = G1 - - BF5020R SOT143R 1 = D 2 = S 3 = G1 4 = G2 - - BF5020W SOT343 1 = D 2 = S 3 = G1 4 = G2 - - Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation TS ≤ 76 °C, BF5020, BF5020R TS ≤ 94 °C, BF5020W Storage temperature Channel temperature Symbol VDS ID IG1S, IG2S VG1S, VG2S Ptot Tstg Tch Value 8 25 ± 10 ±6 200 200 -55 .
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150 150 HF Output + DC EHA07461 Marking KYs KYs KYs Unit V mA mA V mW °C 1 2009-10-01 Thermal Resistance Parameter Channel - soldering point1) BF5020, BF5020R BF5020W Symbol Rthchs BF5020.
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Value ≤ 370 ≤ 280 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min.
typ.
max.
DC Characteristics Drain-source breakdown voltage ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, VG1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 , VDS = 0 Gate2-source leakage current VG2S = 6 V, VG1S = 0 , VDS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 120 kΩ Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 µA Gate2-source pinch-off voltage VDS = 5 V, ID = 20 µA, VG1S = 2 V V(BR)DS 12 - -V +V(BR)G1SS 6 - 15 +V(BR)G2SS 6 - 15 +IG1SS - - 50 nA +IG2SS - - 50...


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