DatasheetsPDF.com

BF5030W

Infineon
Part Number BF5030W
Manufacturer Infineon
Description Silicon N-Channel MOSFET Tetrode
Published Mar 18, 2016
Detailed Description Silicon N-Channel MOSFET Tetrode • Designed for input stages of UHF- and VHF-tuners with AGC function • Supporting 5 V o...
Datasheet PDF File BF5030W PDF File

BF5030W
BF5030W

Overview
Silicon N-Channel MOSFET Tetrode • Designed for input stages of UHF- and VHF-tuners with AGC function • Supporting 5 V operations and power saving 3 V operations • Integrated ESD gate protection diodes • Very low noise figure • High gain, high forward transadmittance • Very good cross modulation at gain reduction • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BF5030.
.
.
3 4 2 1 AGC G2 HF G1 Input RG1 VGG Drain GND ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration BF5030 SOT143 1=S 2=D 3=G2 4=G1 - - BF5030R SOT143R 1=D 2=S 3=G1 4=G2 - - BF5030W SOT343 1=D 2=S 3=G1 4=G2 - - HF Output + DC EHA07461 Marking KXs KXs KXs 1 2009-05-05 BF5030.
.
.
Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation TS ≤ 94 °C, BF5030W TS ≤ 76 °C, BF5030, BF5030R Storage temperature Channel temperature Thermal Resistance Parameter Channel - soldering point1) BF5030W BF5030, BF5030R Symbol VDS ID IG1S, IG2S VG1S, VG2S Ptot Tstg Tch Symbol Rthchs 1For calculation of RthJA please refer to Application Note Thermal Resistance Value 8 25 ±1 ±6 200 200 -55 .
.
.
150 150 Value ≤ 280 ≤ 370 Unit V mA mA V mW °C Unit K/W 2 2009-05-05 BF5030.
.
.
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min.
typ.
max.
DC Characteristics Drain-source breakdown voltage ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, VG1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 , VDS = 0 Gate2-source leakage current VG2S = 6 V, VG1S = 0 , VDS = 0 Drain current VDS = 3 V, VG1S = 0 , VG2S = 3 V VDS = 5 V, VG1S = 0 , VG2S = 4 V V(BR)DS 12 +V(BR)G1SS 6 +V(BR)G2SS 6 +IG1SS - +IG2SS - IDSS - -- 15 - 15 - 50 - 50 - 100 - 100 Drain-source current VDS = 3 V, VG2S ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)