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FERD30SM100DJF

STMicroelectronics
Part Number FERD30SM100DJF
Manufacturer STMicroelectronics
Description Field effect rectifier
Published Mar 19, 2016
Detailed Description $ $ . $ $ .. $$ 3RZHU)/$7Œ[ Features • ST proprietary process • Reduce leakage current • Low forward voltage drop • H...
Datasheet PDF File FERD30SM100DJF PDF File

FERD30SM100DJF
FERD30SM100DJF



Overview
$ $ .
$ $ .
.
$$ 3RZHU)/$7Œ[ Features • ST proprietary process • Reduce leakage current • Low forward voltage drop • High frequency operation • ECOPACK®2 compliant component FERD30SM100DJF Field effect rectifier Datasheet − production data Description The FERD30SM100DJF is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface.
This 100 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key.
Table 1.
Device summary Symbol Value IF(AV) VRRM Tj (max) VF(typ) 30 A 100 V +175 °C 0.
395 V TM: PowerFLAT is a trademark of STMicroelectronics January 2015 This is information on a product in full production.
DocID027306 Rev 1 1/8 www.
st.
com Characteristics 1 Characteristics FERD30SM100DJF Table 2.
Absolute ratings (limiting values, at 25 °C, unless otherwise specified, anode terminals short-circuited) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current IF(AV) Average forward current, δ = 0.
5 Tc = 100 °C IFSM Surge non repetitive forward current tp = 10 ms sinusoidal Tstg Storage temperature range Tj(1) Maximum operating junction temperature 1.
dPtot < 1 condition to avoid thermal runaway for a diode on its own heatsink dTj Rth(j-a) 100 V 45 A 30 A 180 A -65 to + 175 °C 175 °C Symbol Rth(j-c) Junction to case Table 3.
Thermal resistance Parameter Value (max) Unit 2.
6 °C/W Table 4.
Static electrical characteristics (anode terminals short-circuited) Symbol Parameter Test conditions Min.
Typ.
Max.
IR(1) Reverse leakage current Tj = 25 °C Tj = 125 °C VR = VRRM - Tj = 125 °C VR = 70 V - Tj = 25 °C Tj = 125 °C IF = 5 A - VF(2) Forward voltage drop Tj = 25 °C Tj = 125 °C IF = 10A - Tj = 25 °C Tj = 125 °C IF = 30 A - 1.
Pulse test: tp = 5 ms, δ < 2% 2.
Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.
562 x IF(AV) + 0.
0057 ...



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