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RS3E075AT

Rohm
Part Number RS3E075AT
Manufacturer Rohm
Description Pch -30V -7.5A Middle Power MOSFET
Published Mar 20, 2016
Detailed Description RS3E075AT   Pch -30V -7.5A Middle Power MOSFET VDSS RDS(on)(Max.) ID PD -30V 23.5mΩ ±7.5A 2.0W lFeatures 1) Low on - ...
Datasheet PDF File RS3E075AT PDF File

RS3E075AT
RS3E075AT


Overview
RS3E075AT   Pch -30V -7.
5A Middle Power MOSFET VDSS RDS(on)(Max.
) ID PD -30V 23.
5mΩ ±7.
5A 2.
0W lFeatures 1) Low on - resistance.
2) Small Surface Mount Package (SOP8).
3) Pb-free lead plating ; RoHS compliant.
lOutline SOP8            lInner circuit    Datasheet                     lApplication Switching lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche current Power dissipation Junction temperature Range of storage temperature lPackaging specifications Packing Reel size (mm) Type Tape width (mm) Basic ordering unit (pcs) Taping code Marking Embossed Tape 330 12 2500 TB RS3E075AT Symbol VDSS ID*1 ID,pulse*2 VGSS EAS*3 IAS*3 PD*4 Tj Tstg Value -30 ±7.
5 ±30 ±20 4.
2 -7.
5 2.
0 150 -55 to +150 Unit V A A V mJ A W ℃ ℃                                                                                          www.
rohm.
com © 2014 ROHM Co.
, Ltd.
All rights reserved.
1/11 20141008 - Rev.
001     RS3E075AT            lThermal resistance Parameter Thermal resistance, junction - ambient                 Datasheet                      Symbol RthJA*4 Values Min.
Typ.
Max.
- 62.
5 - Unit ℃/W lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = -1mA Breakdown voltage temperature coefficient Zero gate voltage drain current  ΔV(BR)DSS  ID = -1mA    ΔTj     referenced to 25℃ IDSS VDS = -30V, VGS = 0V Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V Gate threshold voltage Gate threshold voltage temperature coefficient VGS(th) VDS = -10, ID = -1mA  ΔVGS(th)   ID = -1mA    ΔTj     referenced to 25℃ Static drain - source on - state resistance Transconductance RDS(on)*5 gfs*5 VGS = -10V, ID = -7.
5A VGS = -4.
5V, ID = -7.
5A VDS = -5V, ID = -7.
5A Values Unit Min.
Typ.
Max.
-30 - - V - -22 - mV/℃ - - -1 μA - - ±100 nA -1.
0 - -2.
5 V - 2.
9 - mV/℃ - 18.
0 23.
5 ...



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