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KTC5027

KEC
Part Number KTC5027
Manufacturer KEC
Description TRIPLE DIFFUSED NPN TRANSISTOR
Published Mar 22, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING, WIDE SOA KTC5027 TRIPLE DIFFUSED N...
Datasheet PDF File KTC5027 PDF File

KTC5027
KTC5027

Overview
SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING, WIDE SOA KTC5027 TRIPLE DIFFUSED NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current DC Pulse IC ICP Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature IB PC Tj Storage Temperature Range Tstg RATING 1100 800 7 3 10 1.
5 50 150 -55 150 UNIT V V V A A W ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaning Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Output Capacitance Transition Frequency ICBO IEBO VCEX(SUS) VCE(sat) VBE(sat) hFE (1) (Note) hFE (2) BVCBO BVCEO BVEBO Cob fT VCB=800V, IE=0 VEB=5V, IC=0 IC=1.
5A, IB1=-IB2=0.
3A L=2mH, Clamped IC=1.
5A, IB=0.
3A IC=1.
5A, IB=0.
3A VCE=5V, IC=0.
2A VCE=5V, IC=1A IC=1mA, IE=0 IC=5mA, RBE= IE=1mA, IC=0 VCB=10V, f=1MHz, IE=0 VCE=10V, IC=0.
2A Turn On Time ton Switching Time Storage Time tstg Fall Time tf Note : hFE (1) Classification R:15 30, O:20 40 2008.
3.
26 Revision No : 1 MIN.
- TYP.
- MAX.
10 10 UNIT A A 800 - - V 15 8 1100 800 7 - 60 15 2V 1.
5 V 40 -V -V -V - pF - MHz - - 0.
5 --3 S - - 0.
3 1/3 KTC5027 2008.
3.
26 Revision No : 1 2/3 KTC5027 2008.
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26 Revision No : 1 3/3 ...


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