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IRF7324TRPBF-1

Part Number	IRF7324TRPBF-1
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Mar 22, 2016
Detailed Description	VDS RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -20 0.018 42 -9.0 V Ω nC A IRF7324TRPbF-1 HEXFET® Power M...
Datasheet	IRF7324TRPBF-1 PDF File

Overview

VDS RDS(on) max (@VGS = -4.
5V) Qg (typical) ID (@TA = 25°C) -20 0.
018 42 -9.
0 V Ω nC A IRF7324TRPbF-1 HEXFET® Power MOSFET S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number IRF7324PbF-1 Package Type SO-8 Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRF7324TRPbF-1 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain-Source Voltage Continuous Drain Current, VGS @ -4.
5V Continuous Drain Current, VGS @ -4.
5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor VGS TJ , TSTG Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance Parameter Max.
RθJA Maximum Junction-to-Ambient Max.
-20 -9.
0 -7.
1 -71 2.
0 1.
3 16 ± 12 -55 to + 150 Units 62.
5 Units V A W W mW/°C V °C °C/W 1 www.
irf.
com © 2014 International Rectifier Submit Datasheet Feedback October 16, 2014 IRF7324TRPbF-1 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp.
Coefficient -20 ––– ––– V VGS = 0V, ID = -250μA ––– -0.
02 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.
018 ––– 0.
026 Ω VGS = -4.
5V, ID = -9.
0A VGS = -2.
5V, ID = -7.
7A VGS(th) Gate Threshold Voltage -0.
45 ––– -1.
0 V VDS = VGS, ID = -250μA gfs Forward Transconductance 19 ––– ––– S VDS = -10V, ID = -9.
0A IDSS Drain-to-Source Leakage Current ––– ––– -1.
0 ––– ––– -25 µA VDS = -16V, VGS = 0V VDS = -16V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Lea...

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