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IRF7380TRPBF-1

International Rectifier
Part Number IRF7380TRPBF-1
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 22, 2016
Detailed Description VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 80 V 73 mΩ 15 nC 3.6 A Applications l High frequency DC-DC c...
Datasheet PDF File IRF7380TRPBF-1 PDF File

IRF7380TRPBF-1
IRF7380TRPBF-1

Overview
VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 80 V 73 mΩ 15 nC 3.
6 A Applications l High frequency DC-DC converters IRF7380TRPbF-1 HEXFET® Power MOSFET S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number IRF7380PbF-1 Package Type SO-8 Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRF7380TRPbF-1 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 100°C IDM PD @TA = 25°C Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cPulsed Drain Current Maximum Power Dissipation dv/dt TJ TSTG Linear Derating Factor hPeak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead fJunction-to-Ambient (PCB Mount) Notes  through † are on page 9 Max.
80 ± 20 3.
6 2.
9 29 2.
0 0.
02 2.
3 -55 to + 150 Units V A W W/°C V/ns °C Typ.
––– ––– Max.
42 62.
5 Units °C/W 1 www.
irf.
com © 2014 International Rectifier Submit Datasheet Feedback October 16, 2014 IRF7380TRPbF-1 Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
V(BR)DSS Δ V(BR)DSS/Δ TJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current 80 ––– ––– 2.
0 ––– ––– IGSS Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ.
––– 0.
09 61 ––– ––– ––– ––– ––– Max.
Units Conditions ––– V VGS = 0V, ID = 250μA ––– V/°C Reference to 25°C, ID = 1mA e73 mΩ VGS = 10V, ID = 2.
2A 4.
0 V VDS = VGS, ID = 250μA 20 μA VDS = 80V, VGS = 0V 250 VDS = 64V, VGS = 0V, TJ = 125°C 200 nA ...


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