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IRF7389PBF-1

International Rectifier
Part Number IRF7389PBF-1
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 22, 2016
Detailed Description VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) N-CH 30 0.029 22 7.3 P-CH -30 0.058 23 -5.3 V Ω nC A IRF73...
Datasheet PDF File IRF7389PBF-1 PDF File

IRF7389PBF-1
IRF7389PBF-1

Overview
VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) N-CH 30 0.
029 22 7.
3 P-CH -30 0.
058 23 -5.
3 V Ω nC A IRF7389PbF-1 HEXFET® Power MOSFET N-CHANNEL MOSFET S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 P-CHANNEL MOSFET Top View SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number Package Type IRF7389PbF-1 SO-8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF7389PbF-1 IRF7389TRPbF-1 Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current… Pulsed Drain Current TA = 25°C TA = 70°C Continuous Source Current (Diode Conduction) Maximum Power Dissipation … Single Pulse Avalanche Energy TA = 25°C TA = 70°C Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range VDS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Maximum N-Channel P-Channel 30 -30 ± 20 7.
3 -5.
3 5.
9 -4.
2 30 -30 2.
5 -2.
5 2.
5 1.
6 82 140 4.
0 -2.
8 0.
20 3.
8 -2.
2 -55 to + 150 °C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient … Symbol RθJA Limit 50 Units V A W mJ A mJ V/ ns Units °C/W 1 www.
irf.
com © 2014 International Rectifier Submit Datasheet Feedback May 15, 2014 IRF7389PbF-1 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS Parameter Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp.
Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn...


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