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IRF7406TRPBF-1

International Rectifier
Part Number IRF7406TRPBF-1
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 22, 2016
Detailed Description VDS RDS(on) max (@VGS = -10V) Qg (max) ID (@TA = 25°C) -30 0.045 59 -5.8 V Ω nC A IRF7406TRPbF-1 HEXFET® Power MOSFE...
Datasheet PDF File IRF7406TRPBF-1 PDF File

IRF7406TRPBF-1
IRF7406TRPBF-1


Overview
VDS RDS(on) max (@VGS = -10V) Qg (max) ID (@TA = 25°C) -30 0.
045 59 -5.
8 V Ω nC A IRF7406TRPbF-1 HEXFET® Power MOSFET S1 S2 S3 G4 8 A D 7D 6D 5D Top View SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number IRF7406PbF-1 Package Type SO-8 Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRF7406TRPbF-1 Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Parameter 10 Sec.
Pulsed Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Thermal Resistance Ratings Parameter RθJA Maximum Junction-to-Ambient„ Max.
-6.
7 -5.
8 -3.
7 -23 2.
5 0.
02 ± 20 -5.
0 -55 to + 150 Units A W W/°C V V/ns °C Typ.
––– Max.
50 Units °C/W 1 www.
irf.
com © 2014 International Rectifier Submit Datasheet Feedback October 16, 2014 IRF7406TRPbF-1 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp.
Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Internal Source Inductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Min.
Typ.
Max.
Units -30 ––– ––– V ––– -0.
02...



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