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IRF7424PBF

International Rectifier
Part Number IRF7424PBF
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 22, 2016
Detailed Description l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Free VDSS -30V PD- 9534...
Datasheet PDF File IRF7424PBF PDF File

IRF7424PBF
IRF7424PBF

Overview
l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Free VDSS -30V PD- 95343 IRF7424PbF HEXFET® Power MOSFET RDS(on) max (mW) 13.
5@VGS = -10V 22@VGS = -4.
5V ID -11A -8.
8A Description S1 A 8D These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to S 2 7D achieve the extremely low on-resistance per silicon S 3 area.
This benefit provides the designer with an extremely efficient device for use in battery and load G 4 6D 5D management applications.
.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
With these improvements, multiple devices can be used in an application with dramatically reduced board space.
The package is designed for vapor phase, infrared, or wave soldering techniques.
Top View SO-8 Absolute Maximum Ratings VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max.
-30 -11 -9.
3 -47 2.
5 1.
6 20 ± 20 -55 to + 150 Units V A W mW/°C V °C Thermal Resistance RθJA www.
irf.
com Parameter Maximum Junction-to-Ambientƒ Max.
50 Units °C/W 1 10/04/04 IRF7424PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn...


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