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IRF7456PBF-1

International Rectifier
Part Number IRF7456PBF-1
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 22, 2016
Detailed Description VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) SMPS MOSFET IRF7456PbF-1 20 0.0065 41 16 V Ω nC A HEXFET®...
Datasheet PDF File IRF7456PBF-1 PDF File

IRF7456PBF-1
IRF7456PBF-1

Overview
VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) SMPS MOSFET IRF7456PbF-1 20 0.
0065 41 16 V Ω nC A HEXFET® Power MOSFET S1 S2 S3 G4 AA 8D 7D 6D 5D Top View SO-8 Applications l High Frequency DC-DC Converters with Synchronous Rectification Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification ⇒ Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number IRF7456PbF-1 Package Type SO-8 Standard Pack Form Tube/Bulk Tape and Reel Quantity 95 4000 Orderable Part Number IRF7456PbF-1 IRF7456TRPbF-1 Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Thermal Resistance RθJA Parameter Maximum Junction-to-Ambient„ Max.
20 ± 12 16 13 130 2.
5 1.
6 0.
02 -55 to + 150 Max.
50 Units V V A W W W/°C °C Units °C/W Typical SMPS Topologies l Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers Notes  through „ are on page 8 1 www.
irf.
com © 2013 International Rectifier Submit Datasheet Feedback November 20, 2013 IRF7456PbF-1 Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp.
Coefficient 20 ––– ––– ––– 0.
024 ––– ––– 0.
00470.
0065 RDS(on) Static Drain-to-Source On-Resistance ––– 0.
00570.
0075 ––– 0.
011 0.
020 VGS(th) IDSS Gate Threshold Voltage Drain-to-Source Leakage Current 0.
6 ––– 2.
0 ––– ––– 20 ––– ––– 100 IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– 200 ––– ––– -200 V VGS = 0V, ID = ...


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