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IRF7469PBF-1

International Rectifier
Part Number IRF7469PBF-1
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 22, 2016
Detailed Description VDS RDS(on) max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 40 V 17 mΩ 21 15 nC 9.0 A IRF7469P...
Datasheet PDF File IRF7469PBF-1 PDF File

IRF7469PBF-1
IRF7469PBF-1

Overview
VDS RDS(on) max (@VGS = 10V) RDS(on) max (@VGS = 4.
5V) Qg (typical) ID (@TA = 25°C) 40 V 17 mΩ 21 15 nC 9.
0 A IRF7469PbF-1 HEXFET® Power MOSFET S1 S2 S3 G4 AA 8D 7D 6D 5D Top View SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number Package Type IRF7469PbF-1 SO-8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF7469PbF-1 IRF7469TRPbF-1 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Max.
40 ± 20 9.
0 7.
3 73 2.
5 1.
6 0.
02 -55 to + 150 Units V V A W W mW/°C °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Notes  through „ are on page 8 1 www.
irf.
com © 2014 International Rectifier Typ.
––– ––– Submit Datasheet Feedback Max.
20 50 Units °C/W June 23, 2014 IRF7469PbF-1 Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp.
Coefficient ––– RDS(on) Static Drain-to-Source On-Resistance ––– ––– VGS(th) IDSS Gate Threshold Voltage Drain-to-Source Leakage Current 1.
0 ––– ––– IGSS Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– ––– 0.
04 12 15.
5 ––– ––– ––– ––– ––– ––– ––– 17 21 3.
0 20 100 200 -200 V V/°C mΩ V μA nA VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 9.
0A ƒ VGS = 4.
5V, ID = 7.
2A ƒ VDS = VGS, ID = 250μA VDS = 32V, VGS = 0V VDS...


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