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IRF7493PBF-1

International Rectifier
Part Number IRF7493PBF-1
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 22, 2016
Detailed Description VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 80 V 15 mΩ 35 nC 9.3 A IRF7493PbF-1 HEXFET® Power MOSFET S...
Datasheet PDF File IRF7493PBF-1 PDF File

IRF7493PBF-1
IRF7493PBF-1

Overview
VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 80 V 15 mΩ 35 nC 9.
3 A IRF7493PbF-1 HEXFET® Power MOSFET S1 S2 S3 G4 AA 8D 7D 6D 5D Top View SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number Package Type IRF7493PbF-1 SO-8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF7493PbF-1 IRF7493TRPbF-1 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Continuous Drain Current, VGS @ 10V cPulsed Drain Current fPower Dissipation fPower Dissipation Linear Derating Factor TJ Operating Junction and TSTG Storage Temperature Range Thermal Resistance RθJL Junction-to-Lead fRθJA Junction-to-Ambient Parameter Max.
80 ± 20 9.
3 7.
4 74 2.
5 1.
6 0.
02 -55 to +150 Units V A W W /°C °C Typ.
––– ––– Max.
20 50 Units °C/W Notes  through … are on page 9 1 www.
irf.
com © 2014 International Rectifier Submit Datasheet Feedback June 23, 2014 IRF7493PbF-1 Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions BVDSS Drain-to-Source Breakdown Voltage 80 ––– ––– V VGS = 0V, ID = 250μA ΔΒVDSS/ΔTJ RDS(on) Breakdown Voltage Temp.
Coefficient ––– 0.
074 ––– mV/°C Reference to 25°C, ID = 1mA eStatic Drain-to-Source On-Resistance ––– 11.
5 15 mΩ VGS = 10V, ID = 5.
6A VGS(th) Gate Threshold Voltage 2.
0 ––– 4.
0 V VDS = VGS, ID = 250μA IDSS Drain-to-Source Leakage Current ––– ––– 20 μA VDS = 80V, VGS = 0V ––– ––– 250 VDS = 64V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V Dynamic @ TJ = 25°C (unless otherwise ...


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