DatasheetsPDF.com

IRF7495PBF

International Rectifier
Part Number IRF7495PBF
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 22, 2016
Detailed Description Applications l High frequency DC-DC converters l Lead-Free PD - 95288 IRF7495PbF VDSS 100V HEXFET® Power MOSFET RDS...
Datasheet PDF File IRF7495PBF PDF File

IRF7495PBF
IRF7495PBF


Overview
Applications l High frequency DC-DC converters l Lead-Free PD - 95288 IRF7495PbF VDSS 100V HEXFET® Power MOSFET RDS(on) max ID :22m @VGS = 10V 7.
3A Benefits l Low Gate to Drain Charge to Reduce Switching Losses S l Fully Characterized Capacitance Including S Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche Voltage S G and Current 18 27 36 45 Top View AA D D D D SO-8 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C ID @ TA = 100°C IDM PD @TA = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cPulsed Drain Current Maximum Power Dissipation dv/dt TJ TSTG Linear Derating Factor hPeak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Thermal Resistance Parameter RθJL Junction-to-Drain Lead eRθJA Junction-to-Ambient (PCB Mount) Notes  through † are on page 8 www.
irf.
com Max.
100 ± 20 7.
3 4.
6 58 2.
5 0.
02 7.
3 -55 to + 150 Units V A W W/°C V/ns °C Typ.
––– ––– Max.
20 50 Units °C/W 1 9/21/04 IRF7495PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient ––– 0.
10 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 18 f22 mΩ VGS = 10V, ID = 4.
4A VGS(th) Gate Threshold Voltage 2.
0 ––– 4.
0 V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Tim...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)