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KTC3600U

KEC
Part Number KTC3600U
Manufacturer KEC
Description EPITAXIAL PLANAR NPN TRANSISTOR
Published Mar 22, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA VHF/UHF WIDE BAND AMPLIFIER APPLICATION. KTC3600U EPITAXIAL PLANAR NPN TRANSISTOR FEATURE...
Datasheet PDF File KTC3600U PDF File

KTC3600U
KTC3600U

Overview
SEMICONDUCTOR TECHNICAL DATA VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
KTC3600U EPITAXIAL PLANAR NPN TRANSISTOR FEATURES Low Noise Figure, High Gain.
NF=1.
1dB, |S21e|2=13dB (f=1GHz).
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Range Tstg RATING 20 10 1.
5 40 100 150 -55 150 UNIT V V V mA mW A J G E MBM DIM MILLIMETERS DA 2.
00+_ 0.
20 2 B 1.
25+_ 0.
15 13 C 0.
90+_ 0.
10 D 0.
3+0.
10/-0.
05 E 2.
10 +_ 0.
20 G 0.
65 P H 0.
15+0.
1/-0.
06 J 1.
30 K 0.
00~0.
10 C L L HM 0.
70 0.
42 +_0.
10 NK N N 0.
10 MIN P 0.
1 MAX 1.
EMITTER 2.
BASE 3.
COLLECTOR USM Marking hFE Rank Type Name R Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICBO VCB=10V, IE=0 Emitter Cut-off Current IEBO VEB=1V, IC=0 DC Current Gain hFE (Note1) VCE=8V, IC=20mA Collector Output Capacitance Reverse Transfer Capacitance Cob VCB=10V, IE=0, f=1MHz (Note2) Cre Transition Frequency fT VCE=8V, IC=20mA Insertion Gain |S21e|2 (1) |S21e|2 (2) VCE=8V, IC=20mA, f=1GHz VCE=8V, IC=20mA, f=2GHz Noise Figure NF (1) NF (2) VCE=8V, IC=5mA, f=1GHz VCE=8V, IC=5mA, f=2GHz Note 1 : hFE Classification H:50~100, J:80~160, K:125~250 Note 2 : Cre is measured by 3 terminal method with capacitance bridge.
MIN.
50 7 10 - TYP.
0.
7 0.
5 10 13 7 1.
1 1.
7 MAX.
1 1 250 - 0.
95 2.
5 - UNIT A A pF pF GHz dB dB dB dB 2008.
8.
29 Revision No : 2 1/5 KTC3600U DC CURRENT GAIN hFE TYPICAL CHARACTERISTICS (Ta=25 C) h FE - I C 300 200 100 70 50 30 VCE=8V Ta=25 C 10 1 2 3 5 7 10 20 30 50 COLLECTOR CURRENT IC (mA) TRANSITION FREQUENCY f T (GHz) 12 10 8 6 4 2 0 1 fT - IC 3 5 7 10 VCE=8V Ta=25 C 30 COLLECTOR CURRENT IC (mA) INSERTION GAIN S2le 2 (dB) 30 25 20 15 10 5 0 0.
1 2 S 2le - f VCE=8V IC=20mA Ta=25 C 0.
2 0.
3 0.
5 0.
7 1 FREQUENCY f (GHz) 23 2008.
...


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