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STE145N65M5

STMicroelectronics
Part Number STE145N65M5
Manufacturer STMicroelectronics
Description N-CHANNEL POWER MOSFET
Published Mar 22, 2016
Detailed Description STE145N65M5 N-channel 650 V, 0.012 Ω typ., 143 A MDmesh™ M5 Power MOSFET in an ISOTOP package Datasheet - production da...
Datasheet PDF File STE145N65M5 PDF File

STE145N65M5
STE145N65M5



Overview
STE145N65M5 N-channel 650 V, 0.
012 Ω typ.
, 143 A MDmesh™ M5 Power MOSFET in an ISOTOP package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS @ TJmax RDS(on) max.
ID STE145N65M5 710 V 0.
015 Ω 143 A  Extremely low RDS(on)  Low gate charge and input capacitance  Excellent switching performance  100% avalanche tested Applications  Switching applications Description This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the wellknown PowerMESH™ horizontal layout.
The resulting product offers extremely low onresistance, making it particularly suitable for applications requiring high power and superior efficiency.
Order code STE145N65M5 Table 1: Device summary Marking Package 145N65M5 ISOTOP Packaging Tube November 2015 DocID025538 Rev 2 This is information on a product in full production.
1/13 www.
st.
com Contents Contents STE145N65M5 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves).
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6 3 Test circuits 8 4 Package information .
9 4.
1 ISOTOP package information .
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10 5 Revision history .
12 2/13 DocID025538 Rev 2 STE145N65M5 1 Electrical ratings Symbol Table 2: Absolute maximum ratings Parameter VGS ID ID IDM(1) PTOT IAR EAS dv/dt(2) VISO Tstg Tj Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Avalanche cu...



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