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STF24N60DM2

STMicroelectronics
Part Number STF24N60DM2
Manufacturer STMicroelectronics
Description N-CHANNEL POWER MOSFET
Published Mar 22, 2016
Detailed Description STF24N60DM2 N-channel 600 V, 0.175 Ω typ., 18 A MDmesh™ DM2 Power MOSFET in a TO-220FP package Datasheet − production d...
Datasheet PDF File STF24N60DM2 PDF File

STF24N60DM2
STF24N60DM2

Overview
STF24N60DM2 N-channel 600 V, 0.
175 Ω typ.
, 18 A MDmesh™ DM2 Power MOSFET in a TO-220FP package Datasheet − production data 3 2 1 TO-220FP Figure 1.
Internal schematic diagram D(2) Features Order code STF24N60DM2 VDS @ TJmax 650 V RDS(on) max 0.
20 Ω • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected ID 18 A Applications • Switching applications G(1) S(3) AM01476v1 Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series.
It offers very low recovery charge and time (Qrr, trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Order code STF24N60DM2 Table 1.
Device summary Marking Package 24N60DM2 TO-220FP Packaging Tube March 2015 This is information on a product in full production.
DocID025498 Rev 4 1/13 www.
st.
com Contents Contents STF24N60DM2 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves) .
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6 3 Test circuits .
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8 4 Package mechanical data .
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9 5 Revision history .
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12 2/13 DocID025498 Rev 4 STF24N60DM2 1 Electrical ratings Electrical ratings Table 2.
Absolute maximum ratings Symbol Parameter Value VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (2) Drain current (pulsed) PTOT Total d...


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