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STFU18N65M2

STMicroelectronics
Part Number STFU18N65M2
Manufacturer STMicroelectronics
Description N-CHANNEL POWER MOSFET
Published Mar 22, 2016
Detailed Description STFU18N65M2 N-channel 650 V, 0.275 Ω typ., 12 A MDmesh™ M2 Power MOSFET in a TO-220FP ultra narrow leads package Datash...
Datasheet PDF File STFU18N65M2 PDF File

STFU18N65M2
STFU18N65M2


Overview
STFU18N65M2 N-channel 650 V, 0.
275 Ω typ.
, 12 A MDmesh™ M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data 3 2 1 TO-220FP ultra narrow leads Figure 1: Internal schematic diagram D(2) G(1) Features Order code STFU18N65M2 VDS 650 V RDS(on) max 0.
33 Ω ID 12 A  Extremely low gate charge  Excellent output capacitance (Coss) profile  100% avalanche tested  Zener-protected Applications  Switching applications  LLC converters, resonant converters Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
S(3) Order code STFU18N65M2 AM15572v1_no_tab Table 1: Device summary Marking Package 18N65M2 TO-220FP ultra narrow leads Packaging Tube October 2015 DocID027562 Rev 2 This is information on a product in full production.
1/12 www.
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com Contents Contents STFU18N65M2 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves).
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6 3 Test circuit .
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8 4 Package mechanical data .
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9 4.
1 TO-220FP unl package information 9 5 Revision history .
11 2/12 DocID027562 Rev 2 STFU18N65M2 Electrical ratings 1 Electrical ratings Symbol Table 2: Absolute maximum ratings Parameter Value Unit VGS ID ID IDM(2) PTOT VISO dv/dt (3) dv/dt (4) Tstg Tj Gate-source voltage Drain current (c...



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