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STFU28N65M2

STMicroelectronics
Part Number STFU28N65M2
Manufacturer STMicroelectronics
Description N-CHANNEL POWER MOSFET
Published Mar 22, 2016
Detailed Description STFU28N65M2 N-channel 650 V, 0.15 Ω typ., 20 A MDmesh™ M2 Power MOSFET in a TO-220FP ultra narrow leads package Datashe...
Datasheet PDF File STFU28N65M2 PDF File

STFU28N65M2
STFU28N65M2

Overview
STFU28N65M2 N-channel 650 V, 0.
15 Ω typ.
, 20 A MDmesh™ M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data 3 2 1 TO-220FP ultra narrow leads Figure 1: Internal schematic diagram D(2) G(1) Features Order code STFU28N65M2 VDS 650 V RDS(on) max 0.
18 Ω ID 20 A  Extremely low gate charge  Excellent output capacitance (Coss) profile  100% avalanche tested  Zener-protected Applications  Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
S(3) Order code STFU28N65M2 AM15572v1_no_tab Table 1: Device summary Marking Package 28N65M2 TO-220FP ultra narrow leads Packaging Tube November 2015 DocID027607 Rev 3 This is information on a product in full production.
1/12 www.
st.
com Contents Contents STFU28N65M2 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves).
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6 3 Test circuit .
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8 4 Package mechanical data .
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9 4.
1 TO-220FP ultra narrow leads package information.
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9 5 Revision history .
11 2/12 DocID027607 Rev 3 STFU28N65M2 Electrical ratings 1 Electrical ratings Symbol Table 2: Absolute maximum ratings Parameter Value Unit VGS ID ID IDM(2) PTOT VISO dv/dt (3) dv/dt (4) Tstg Tj Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (contin...


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