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STGB10M65DF2

Part Number	STGB10M65DF2
Manufacturer	STMicroelectronics
Description	Trench gate field-stop IGBT
Published	Mar 22, 2016
Detailed Description	STGB10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low loss Datasheet - production data TAB 3 1 D2PAK Fig...
Datasheet	STGB10M65DF2 PDF File

Overview

STGB10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low loss Datasheet - production data TAB 3 1 D2PAK Figure 1: Internal schematic diagram Features  6 µs of short-circuit withstand time  VCE(sat) = 1.
55 V (typ.
) @ IC = 10 A  Tight parameter distribution  Safer paralleling  Low thermal resistance  Soft and very fast recovery antiparallel diode Applications  Motor control  UPS  PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
The device is part of the M series of IGBTs, which represents an optimum compromise in performance to maximize the efficiency of inverter systems where low loss and short-circuit capability are essential.
Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
Order code STGB10M65DF2 Table 1: Device summary Marking Package G10M65DF2 D²PAK Packing Tape and reel October 2015 DocID027429 Rev 5 This is information on a product in full production.
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com Contents Contents STGB10M65DF2 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves).
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7 3 Test circuits .
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13 4 Package information .
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14 4.
1 D²PAK package information 14 4.
2 D²PAK packing information .
17 5 Revision history .
19 2/20 DocID027429 Rev 5 STGB10M65DF2 1 Electrical ratings Symbol Table 2: Absolute maximum ratings Parameter VCES...

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