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STGWA30M65DF2

Part Number	STGWA30M65DF2
Manufacturer	STMicroelectronics
Description	Trench gate field-stop IGBT
Published	Mar 22, 2016
Detailed Description	STGW30M65DF2, STGWA30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low loss Datasheet - production data Fig...
Datasheet	STGWA30M65DF2 PDF File

Overview

STGW30M65DF2, STGWA30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low loss Datasheet - production data Figure 1: Internal schematic diagram Features  6 µs of minimum short-circuit withstand time  VCE(sat) = 1.
55 V (typ.
) @ IC = 50 A  Tight parameters distribution  Safer paralleling  Low thermal resistance  Soft and very fast recovery antiparallel diode Applications  Motor control  UPS  PFC Description plur These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.
These devices are part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential.
Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
Order code STGW30M65DF2 STGWA30M65DF2 Table 1: Device summary Marking Package G30M65DF2 TO-247 G30M65DF2 TO-247 long leads Packaging Tube Tube December 2015 DocID027768 Rev 3 This is information on a product in full production.
1/19 www.
st.
com Contents Contents STGW30M65DF2, STGWA30M65DF2 1 Electrical ratings.
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3 2 Electrical characteristics 4 2.
1 Electrical characteristics (curves).
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6 3 Test circuits .
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13 4 Package information 14 4.
1 TO-247 package information.
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14 4.
2 TO-247 long leads package information .
16 5 Revision history.
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18 2/19 DocID027768 Rev 3 STGW30M65DF2, STGWA...

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