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STH170N8F7-2

STMicroelectronics
Part Number STH170N8F7-2
Manufacturer STMicroelectronics
Description N-CHANNEL POWER MOSFET
Published Mar 22, 2016
Detailed Description STH170N8F7-2 N-channel 80 V, 0.0028 Ω typ., 120 A, STripFET™ F7 Power MOSFET in a H²PAK-2 package Datasheet — productio...
Datasheet PDF File STH170N8F7-2 PDF File

STH170N8F7-2
STH170N8F7-2

Overview
STH170N8F7-2 N-channel 80 V, 0.
0028 Ω typ.
, 120 A, STripFET™ F7 Power MOSFET in a H²PAK-2 package Datasheet — production data TAB 2 3 1 H2PAK-2 Features Order code VDS RDS(on) max.
ID PTOT STH170N8F7-2 80 V 0.
0037 Ω 120 A 250 W • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Figure 1.
Internal schematic diagram ' 7$% *  Applications • Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
6  +3$.
Order code STH170N8F7-2 Table 1.
Device summary Marking Package 170N8F7 H2PAK-2 Packaging Tape and reel February 2015 This is information on a product in full production.
DocID026382 Rev 2 1/15 www.
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com Contents Contents STH170N8F7-2 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves) .
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6 3 Test circuits .
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8 4 Package information .
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9 5 Packing information .
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12 6 Revision history .
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14 2/15 DocID026382 Rev 2 STH170N8F7-2 1 Electrical ratings Electrical ratings Table 2.
Absolute maximum ratings Symbol Parameter Value VDS Drain-source voltage VGS Gate-source voltage ID(1) Drain current (continuous) ID(1) Drain current (continuous) at TC = 100 °C ...


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