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STL3N10F7

STMicroelectronics
Part Number STL3N10F7
Manufacturer STMicroelectronics
Description N-CHANNEL POWER MOSFET
Published Mar 22, 2016
Detailed Description STL3N10F7 N-channel 100 V, 0.062 Ω typ., 4 A STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 2x2 package Datasheet...
Datasheet PDF File STL3N10F7 PDF File

STL3N10F7
STL3N10F7

Overview
STL3N10F7 N-channel 100 V, 0.
062 Ω typ.
, 4 A STripFET™ VII DeepGATE™ Power MOSFET in a PowerFLAT™ 2x2 package Datasheet - production data Features 1 2 3 1 2 3 6 5 4 PowerFLAT™ 2x2 Order code STL3N10F7 VDS 100 V RDS(on) max 0.
07 Ω • N-channel enhancement mode • Low gate charge • 100% avalanche rated ID 4A Applications • Switching applications Figure 1.
Internal schematic diagram 1(D) 2(D) 3(G) DS Description th This device utilizes the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
6(D) 5(D) 4(S) Bottom view AM11269v1 Order code STL3N10F7 Table 1.
Device summary Marking Packages ST3N PowerFLAT™ 2x2 Packaging Tape and reel April 2014 This is information on a product in full production.
DocID025948 Rev 2 1/13 www.
st.
com Contents Contents STL3N10F7 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves) .
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6 3 Test circuits .
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8 4 Package mechanical data .
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9 5 Revision history .
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12 2/13 DocID025948 Rev 2 STL3N10F7 1 Electrical ratings Electrical ratings Symbol Table 2.
Absolute maximum ratings Parameter VDS VGS (1) ID (1) ID (2) IDM (1) PTOT TJ Drain-source voltage Gate-source voltage Drain current (continuous) at Tpcb = 25 °C Drain current (continuous) at Tpcb=100 °C Drain current (pulsed) Total dissipation at Tpcb = 25 °C Operating junction temperature Tstg storage temperature 1.
The value is rated according Rthj-pcb 2.
Pu...


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