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STB130N6F7

STMicroelectronics
Part Number STB130N6F7
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Mar 22, 2016
Detailed Description STB130N6F7 N-channel 60 V, 4.2 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a D²PAK package Datasheet - production data ...
Datasheet PDF File STB130N6F7 PDF File

STB130N6F7
STB130N6F7

Overview
STB130N6F7 N-channel 60 V, 4.
2 mΩ typ.
, 80 A STripFET™ F7 Power MOSFET in a D²PAK package Datasheet - production data TAB 3 1 D2PAK Figure 1: Internal schematic diagram D(2, TAB) G(1) Features Order code STB130N6F7 VDS 60 V RDS(on) max.
5.
0 mΩ ID 80 A PTOT 160 W  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
S(3) Order code STB130N6F7 AM01475v1_Tab Table 1: Device summary Marking Package 130N6F7 D²PAK Packing Tape and reel December 2015 DocID027380 Rev 5 This is information on a product in full production.
1/14 www.
st.
com Contents Contents STB130N6F7 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves).
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5 3 Test circuits 7 4 Package information .
8 4.
1 D²PAK (TO-263) type A package information 8 4.
2 D²PAK packing information .
11 5 Revision history .
13 2/14 DocID027380 Rev 5 STB130N6F7 1 Electrical ratings Symbol Table 2: Absolute maximum ratings Parameter VDS VGS ID(1) IDM(2) PTOT EAS(3) Tstg Tj Drain-source voltage Gate-source voltage Drain current (continuous) at Tcase = 25 °C Drain current (c...


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