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STB9NK80Z

Part Number	STB9NK80Z
Manufacturer	STMicroelectronics
Description	N-channel Power MOSFET
Published	Mar 22, 2016
Detailed Description	STB9NK80Z Datasheet Automotive-grade N-channel 800 V, 1.5 Ω typ., 5.2 A SuperMESH Power MOSFET in a D²PAK package TAB 2...
Datasheet	STB9NK80Z PDF File

Overview

STB9NK80Z Datasheet Automotive-grade N-channel 800 V, 1.
5 Ω typ.
, 5.
2 A SuperMESH Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) S(3) AM01475V1 Features Order code STB9NK80Z VDS 800 V RDS(on) max.
1.
8 Ω ID 5.
2 A • AEC-Q101 qualified • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications • Switching applications Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH.
In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Product status link STB9NK80Z Product summary Order code STB9NK80Z Marking B9NK80Z Package D²PAK Packing Tape and reel DS9606 - Rev 3 - October 2019 For further information contact your local STMicroelectronics sales office.
www.
st.
com 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C ESD Gate-source human body model (C = 100 pF, R = 1.
5 kΩ) dv/dt (2) Peak diode recovery voltage slope Tj Operating junction temperature range Tstg Storage temperature range 1.
Pulse width limited by safe operating area.
2.
ISD ≤ 5.
2 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS.
Symbol Rthj-case Rthj-amb Table 2.
Thermal data Parameter Thermal resistance junction-case Thermal resistance junction-ambient Table 3.
Avalanche characteristics Symbol Parameter IAR (1) Avalanche current, repetitive or not-repetitive EAS (2) Single pulse avalanche energy 1.
Pulse width limited by Tjmax.
2.
Starting Tj = 25 °C, ID = IAR, VDD = 50 V.
STB9NK80Z Electrical ratings Value 800 ±30 5.
2 3.
3 20.
8 12...

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