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STD20P3H6AG

STMicroelectronics
Part Number STD20P3H6AG
Manufacturer STMicroelectronics
Description P-CHANNEL POWER MOSFET
Published Mar 22, 2016
Detailed Description STD20P3H6AG Automotive-grade P-channel -30 V, 33 mΩ typ., -20 A STripFET™ F6 Power MOSFET in a DPAK package Datasheet -...
Datasheet PDF File STD20P3H6AG PDF File

STD20P3H6AG
STD20P3H6AG

Overview
STD20P3H6AG Automotive-grade P-channel -30 V, 33 mΩ typ.
, -20 A STripFET™ F6 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram D(2, TAB) G(1) Features Order code STD20P3H6AG VDS -30 V RDS(on) max.
50 mΩ ID -20 A  Designed for automotive applications and AEC-Q101 qualified  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure.
The resulting Power MOSFET exhibits very low RDS(on) in all packages.
S(3) Order code STD20P3H6AG AM11258v1 Table 1: Device summary Marking Package 20P3H6 DPAK Packing Tape and reel September 2015 DocID028377 Rev 2 This is information on a product in full production.
1/15 www.
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com Contents Contents STD20P3H6AG 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves).
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6 3 Test circuits 8 4 Package information .
9 4.
1 DPAK (TO-252) type A package information.
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9 4.
2 DPAK (TO-252) packing information.
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12 5 Revision history .
14 2/15 DocID028377 Rev 2 STD20P3H6AG 1 Electrical ratings Symbol Table 2: Absolute maximum ratings Parameter VDS VGS ID IDM(1) PTOT EAS(2) Tstg Tj Drain-source voltage Gate-source voltage Drain current (continuous) at Tcase = 25 °C Drain current (continuous) at Tcase = 100 °C Drain current (pulse...


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