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STD80N6F6

STMicroelectronics
Part Number STD80N6F6
Manufacturer STMicroelectronics
Description N-CHANNEL POWER MOSFET
Published Mar 22, 2016
Detailed Description STD80N6F6 Automotive-grade N-channel 60 V, 4.4 mΩ typ., 80 A STripFET™ VI DeepGATE™ Power MOSFET in a DPAK package Data...
Datasheet PDF File STD80N6F6 PDF File

STD80N6F6
STD80N6F6

Overview
STD80N6F6 Automotive-grade N-channel 60 V, 4.
4 mΩ typ.
, 80 A STripFET™ VI DeepGATE™ Power MOSFET in a DPAK package Datasheet - production data Features 7$%   '3$.
Order code STD80N6F6 VDS 60 V RDS(on) max.
ID 5 mΩ (1) 80 A 1.
Current limited by package • Designed for automotive applications and AEC-Q101 qualified • Low gate charge • Very low on-resistance • High avalanche ruggedness Figure 1.
Internal schematic diagram ' Ć7$% Applications • Switching applications Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate *  structure.
The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
6  $0Y Order code STD80N6F6 Table 1.
Device summary Marking Packages 80N6F6 DPAK Packaging Tape and reel January 2014 This is information on a product in full production.
DocID023471 Rev 2 1/15 www.
st.
com Contents Contents STD80N6F6 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves) .
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6 3 Package mechanical data .
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8 4 Packaging mechanical data .
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12 5 Revision history .
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14 2/15 DocID023471 Rev 2 STD80N6F6 1 Electrical ratings Electrical ratings Symbol Table 2.
Absolute maximum ratings Parameter Value VDS VGS (1) ID (1) ID (1) IDM PTOT Drain-source voltage Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Tstg Storage temperature Tj Operating j...


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