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STF10N80K5

STMicroelectronics
Part Number STF10N80K5
Manufacturer STMicroelectronics
Description N-CHANNEL POWER MOSFET
Published Mar 22, 2016
Detailed Description STF10N80K5 N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFET in a TO-220FP package Datasheet - production data...
Datasheet PDF File STF10N80K5 PDF File

STF10N80K5
STF10N80K5

Overview
STF10N80K5 N-channel 800 V, 0.
470 Ω typ.
, 9 A MDmesh™ K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS STF10N80K5 800 V RDS(on) max 0.
600 Ω ID PTOT 9 A 30 W 3 2 1 TO-220FP Figure 1.
Internal schematic diagram D(2) G(1) S(3) AM01476v1 • Industry’s best RDS(on) • Industry’s best figure of merit (FoM) • Ultra-low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.
The result is a dramatic reduction in onresistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Order code STF10N80K5 Table 1.
Device summary Marking Package 10N80K5 TO-220FP Packaging Tube November 2014 This is information on a product in full production.
DocID026564 Rev 4 1/14 www.
st.
com Contents Contents STF10N80K5 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 3 Electrical characteristics (curves) .
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6 4 Test circuits .
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9 5 Package mechanical data .
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10 6 Revision history .
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13 2/14 DocID026564 Rev 4 STF10N80K5 1 Electrical ratings Electrical ratings Table 2.
Absolute maximum ratings Symbol Parameter Value VGS ID(1) ID(1) IDM (2) PTOT IAR EAS VISO dv/dt (3) dv/dt(4) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Max current d...


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