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STF28N60DM2

STMicroelectronics
Part Number STF28N60DM2
Manufacturer STMicroelectronics
Description N-CHANNEL POWER MOSFET
Published Mar 22, 2016
Detailed Description STF28N60DM2 N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFET in a TO-220FP package Datasheet - production da...
Datasheet PDF File STF28N60DM2 PDF File

STF28N60DM2
STF28N60DM2

Overview
STF28N60DM2 N-channel 600 V, 0.
13 Ω typ.
, 21 A MDmesh™ DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code STF28N60DM2 VDS @ TJmax.
650 V RDS(on) max.
0.
16 Ω ID PTOT 21 A 30 W 3 2 1 TO-220FP Figure 1: Internal schematic diagram  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Order code STF28N60DM2 Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.
It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Table 1: Device summary Marking 28N60DM2 Package TO-220FP Packing Tube October 2015 DocID026863 Rev 2 This is information on a product in full production.
1/12 www.
st.
com Contents Contents STF28N60DM2 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves).
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6 3 Test circuits 8 4 Package information .
9 4.
1 TO-220FP package information .
9 5 Revision history .
11 2/12 DocID026863 Rev 2 STF28N60DM2 Electrical ratings 1 Electrical ratings Symbol Table 2: Absolute maximum ratings Parameter Value Unit VGS ID IDM(1) PTOT dv/dt(2) dv/dt(3) VISO(4) Tstg Tj Gate-source voltage Drain current (continuous) at Tcase = 25 °C Dr...


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