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STFI9N60M2

STMicroelectronics
Part Number STFI9N60M2
Manufacturer STMicroelectronics
Description N-CHANNEL POWER MOSFET
Published Mar 22, 2016
Detailed Description STF9N60M2, STFI9N60M2 N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220FP and I2PAKFP p...
Datasheet PDF File STFI9N60M2 PDF File

STFI9N60M2
STFI9N60M2


Overview
STF9N60M2, STFI9N60M2 N-channel 600 V, 0.
72 Ω typ.
, 5.
5 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production data 3 2 1 TO-220FP 1 23 I2PAKFP (TO-281) Features Order codes STF9N60M2 STFI9N60M2 VDS @ TJmax RDS(on) max ID 650 V 0.
78 Ω 5.
5 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Figure 1.
Internal schematic diagram Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.
These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.
They are therefore suitable for the most demanding high efficiency converters.
AM15572v1 Order codes STF9N60M2 STFI9N60M2 .
Table 1.
Device summary Marking Package 9N60M2 TO-220FP I2PAKFP Packaging Tube March 2014 This is information on a product in full production.
DocID024728 Rev 2 1/15 www.
st.
com Contents Contents STF9N60M2, STFI9N60M2 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves) .
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6 3 Test circuits .
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8 4 Package mechanical data .
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9 5 Revision history .
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12 2/15 DocID024728 Rev 2 STF9N60M2, STFI9N60M2 1 Electrical ratings Electrical ratings Table 2.
Absolute maximum ratings Symbol Parameter VGS ID ID IDM (1) PTOT VISO dv/dt (2) dv/dt(3) Gate-s...



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