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STFI260N6F6

STMicroelectronics
Part Number STFI260N6F6
Manufacturer STMicroelectronics
Description N-CHANNEL POWER MOSFET
Published Mar 22, 2016
Detailed Description STFI260N6F6 N-channel 60 V, 0.0024 Ω, 80 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAKFP package Datasheet — prelimina...
Datasheet PDF File STFI260N6F6 PDF File

STFI260N6F6
STFI260N6F6


Overview
STFI260N6F6 N-channel 60 V, 0.
0024 Ω, 80 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAKFP package Datasheet — preliminary data Features Order codes STFI260N6F6 VDSS 60 V RDS(on) max < 0.
003 Ω ID 80 A ■ Fully insulated and low profile package with increased creepage path from pin to heatsink plate ■ Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness Application ■ Switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
12 3 I²PAKFP (TO-281) Figure 1.
Internal schematic diagram $ ' 3 !-V Table 1.
Device summary Order codes Marking STFI260N6F6 260N6F6 Package I²PAK (TO-281) Packaging Tube April 2012 Doc ID 023096 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation.
Details are subject to change without notice.
1/12 www.
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com 12 Contents Contents STFI260N6F6 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves) .
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6 3 Test circuits .
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8 4 Package mechanical data .
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9 5 Revision history .
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11 2/12 Doc ID 023096 Rev 1 STFI260N6F6 1 Electrical ratings Table 2.
Absolute maximum ratings Symbol Parameter VDS VGS ID ID IDM (1) PTOT Drain-source voltage Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipati...



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