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BFU730LX

NXP
Part Number BFU730LX
Manufacturer NXP
Description NPN wideband silicon germanium RF transistor
Published Mar 23, 2016
Detailed Description 627& BFU730LX NPN wideband silicon germanium RF transistor Rev. 1 — 8 May 2013 Product data sheet 1. Product pro...
Datasheet PDF File BFU730LX PDF File

BFU730LX
BFU730LX

Overview
627& BFU730LX NPN wideband silicon germanium RF transistor Rev.
1 — 8 May 2013 Product data sheet 1.
Product profile CAUTION 1.
1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package.
This device is sensitive to ElectroStatic Discharge (ESD).
Observe precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.
20, IEC/ST 61340-5, JESD625-A or equivalent standards.
1.
2 Features and benefits  Leadless ultra small plastic SMD package 1.
0 mm  0.
6 mm  0.
34 mm  Low noise high gain microwave transistor  Noise figure (NF) = 0.
75 dB at 6 GHz  High maximum power gain (Gp(max)) of 15.
8 dB at 6 GHz  Excellent linearity in WiFi LNA from 5 GHz to 5.
9 GHz:  input third-order intercept point (IP3i) = 15 dBm  input power at 1 dB gain compression (Pi(1dB)) = 0 dBm See application note AN11224: Low Noise Fast Turn ON/OFF 5-5.
9GHz WiFi LNA with BFU730LX.
 110 GHz fT silicon germanium technology 1.
3 Applications  Wi-Fi / WLAN See application notes:  AN11223: Low Noise Fast Turn ON/OFF 2.
4-2.
5GHz WiFi LNA with BFU730LX  AN11224: Low Noise Fast Turn ON/OFF 5-5.
9GHz WiFi LNA with BFU730LX  WiMAX  LNA for GPS, GLONASS, Galileo and Compass (BeiDou)  DBS (2nd LNA stage, mixer stage, DRO), SDARS  RKE, AMR / Zigbee  LNA for microwave communications systems  Low current battery equipped applications  Microwave driver / buffer applications NXP Semiconductors BFU730LX NPN wideband silicon germanium RF transistor 1.
4 Quick reference data Table 1.
Quick reference data Tj = 25 C unless otherwise specified.
Symbol Parameter Conditions VCB collector-base voltage open emitter VCE collector-emitter voltage open base shorted base VEB emitter-base voltage open collector IC collector current Ptot total power dissipation Tsp  110 C hFE DC current gain IC = 2 mA; VCE = 2 V; Tj = 25 C fT transition frequency IC = ...


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