DatasheetsPDF.com

BFU530

NXP
Part Number BFU530
Manufacturer NXP
Description NPN wideband silicon RF transistor
Published Mar 23, 2016
Detailed Description 627% BFU530 NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 Ge...
Datasheet PDF File BFU530 PDF File

BFU530
BFU530

Overview
627% BFU530 NPN wideband silicon RF transistor Rev.
1 — 5 March 2014 Product data sheet 1.
Product profile 1.
1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.
The BFU530 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.
1.
2 Features and benefits  Low noise, high breakdown RF transistor  AEC-Q101 qualified  Minimum noise figure (NFmin) = 0.
7 dB at 900 MHz  Maximum stable gain 21.
5 dB at 900 MHz  11 GHz fT silicon technology 1.
3 Applications  Applications requiring high supply voltages and high breakdown voltages  Broadband amplifiers up to 2 GHz  Low noise amplifiers for ISM applications  ISM band oscillators 1.
4 Quick reference data Table 1.
Quick reference data Tamb = 25 C unless otherwise specified Symbol Parameter Conditions VCB collector-base voltage open emitter VCE collector-emitter voltage open base shorted base VEB emitter-base voltage open collector IC collector current Ptot total power dissipation Tsp  87 C hFE DC current gain IC = 10 mA; VCE = 8 V Cc collector capacitance VCB = 8 V; f = 1 MHz fT transition frequency IC = 15 mA; VCE = 8 V; f = 900 MHz Min Typ Max Unit -- 24 V -- 12 V -- 24 V -- 2V - 10 40 mA [1] - - 450 mW 60 95 200 - 0.
65 - pF - 11 - GHz NXP Semiconductors BFU530 NPN wideband silicon RF transistor Table 1.
Quick reference data …continued Tamb = 25 C unless otherwise specified Symbol Parameter Conditions Gp(max) NFmin PL(1dB) maximum power gain minimum noise figure output power at 1 dB gain compression IC = 10 mA; VCE = 8 V; f = 900 MHz IC = 1 mA; VCE = 8 V; f = 900 MHz; S = opt IC = 15 mA; VCE = 8 V; ZS = ZL = 50 ; f = 900 MHz [1] Tsp is the temperature at the solder point of the collector lead.
[2] If K > 1 then Gp(max) is the maximum power gain.
If K  1 then Gp(max) = MSG.
2.
Pinning information Min [2] - - Typ 21.
5 0.
7 10...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)