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KF2N60L


Part Number KF2N60L
Manufacturer KEC
Title N CHANNEL MOS FIELD EFFECT TRANSISTOR
Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche char...
Features VDSS= 600V, ID= 0.70A RDS(ON)=4.4 (Max) @VGS = 10V Qg(typ) = 6.0nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS TC=25 Drain Current TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diod...

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KF2N60D : This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES VDSS= 600V, ID= 2.0A RDS(ON)=4.4 (Max) @VGS = 10V Qg(typ) = 6.0nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt Drain Power Dissipation Tc=25 Derate above 25 PD Maximum Junction Temperature Storage Temperature Range Thermal Characteri.

KF2N60F : KF2N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 600V, ID= 2A Drain-Source ON Resistance : RDS(ON)=4.4 Qg(typ) = 6.0nC (Max) @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL KF2N60P KF2N60F UNIT Drain-Source Voltage VDSS 600 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 2 2* 1.3 1.3* 4 4* 60 2.

KF2N60I : This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES VDSS= 600V, ID= 2.0A RDS(ON)=4.4 (Max) @VGS = 10V Qg(typ) = 6.0nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt Drain Power Dissipation Tc=25 Derate above 25 PD Maximum Junction Temperature Storage Temperature Range Thermal Characteri.

KF2N60P : KF2N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 600V, ID= 2A Drain-Source ON Resistance : RDS(ON)=4.4 Qg(typ) = 6.0nC (Max) @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL KF2N60P KF2N60F UNIT Drain-Source Voltage VDSS 600 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 2 2* 1.3 1.3* 4 4* 60 2.

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KF0604D : Switching Type WW Vrms .100Y.C W .TW W 0Y.C VinM.TW Irms Y.C WW 0 0 W T MZero . 1 0 . O 1 W M . O 6340 KF0602D KYOTTO DC-DC SSR 3~32Vdc 2A 3~60Vdc No Built-in Cross W C W W W SSR 00Y.C 3~32Vdc .TW 4A .CO .KYOTTO 0Y.No Built-inM WW T . W 0 Y W 7756 KF0604D DC-DC 3~60Vdc Zero Cross 1 0 WW .1 T . 1 0 M . O W M O W O W WW .100Y.C M.TW WW .100Y.C M.TW WW .100Y.C M.TW W O W .CO .TW O W HOMOLOGUE ULWW W 00Y WW .100Y.C M•.T 1 WW .100Y.C M.TW M . W (EBS) O • CARTES SUPPORTS disponibles W .CO .TW O W W C . Y W C W . 0 Y W W W 0 Y W .T APPROVED W • UL .100 W.1 Y.COM W M.T .100 OM W O W W C . W C W available (W Y • SOCKETS EBS) .T W 00 W WW .100Y. M.T .100 W.1 Y.COM W M.T O W O W W C . W WW .100Y .TW WW.

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