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AUIRF7749L2TR

International Rectifier
Part Number AUIRF7749L2TR
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 24, 2016
Detailed Description AUTOMOTIVE GRADE AUIRF7749L2TR  Advanced Process Technology  Optimized for Automotive Motor Drive, DC-DC and other...
Datasheet PDF File AUIRF7749L2TR PDF File

AUIRF7749L2TR
AUIRF7749L2TR

Overview
AUTOMOTIVE GRADE AUIRF7749L2TR  Advanced Process Technology  Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications  Exceptionally Small Footprint and Low Profile  High Power Density  Low Parasitic Parameters  Dual Sided Cooling  175°C Operating Temperature  Repetitive Avalanche Allowed up to Tjmax  Lead Free, RoHS Compliant and Halogen Free  Automotive Qualified * Automotive DirectFET® Power MOSFET  V(BR)DSS RDS(on) typ.
max.
ID (Silicon Limited) Qg 60V 1.
1m 1.
5m 345A 183nC   DG S S S S S S SD S   Applicable DirectFET® Outline and Substrate Outline  L8 DirectFET2 L-can SB SC M2 M4 L4 L6 L8 Description The AUIRF7749L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of a D-Pak (TO-252AA) and only 0.
7mm profile.
The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value.
The advanced DirectFET® packaging platform coupled with the latest silicon technology allows the AUIRF7749L2 to offer substantial system level savings and performance improvement specifically in motor drive, DC-DC and other heavy load applications on ICE, HEV and EV platforms.
This MOSFET utilizes the latest processing techniques to achieve ultra low on-resistance per silicon area.
Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability.
These features combine to make this MOSFET a highly efficient, robust and reliabl...


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