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IRFH8201PBF

International Rectifier
Part Number IRFH8201PBF
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 24, 2016
Detailed Description VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 0.95 1.60 56 100 V m nC A...
Datasheet PDF File IRFH8201PBF PDF File

IRFH8201PBF
IRFH8201PBF

Overview
VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.
5V) Qg (typical) ID (@TC (Bottom) = 25°C) 25 0.
95 1.
60 56 100 V m nC A   Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverters StrongIRFET™ IRFH8201PbF HEXFET® Power MOSFET   PQFN 5X6 mm Features Low RDSon (<0.
95m) Low Thermal Resistance to PCB (<0.
8°C/W) Low Profile (<0.
9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial Qualification Benefits Lower Conduction Losses Enable better thermal dissipation results in Increased Power Density  Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base part number   IRFH8201PbF Package Type   PQFN 5mm x 6 mm Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFH8201TRPbF Absolute Maximum Ratings VGS ID @ TA = 25°C ID @ TC (Bottom) = 25°C ID @ TC (Bottom) = 100°C ID @ TC(Bottom) = 25°C IDM PD @TA = 25°C PD @TC (Bottom) = 25°C TJ TSTG Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current Power Dissipation  Power Dissipation  Linear Derating Factor  Operating Junction and Storage Temperature Range   Max.
± 20 49 324 205 100 700 3.
6 156 0.
029 -55 to + 150   Units V A  W W/°C °C Notes  through  are on page 9 1 www.
irf.
com © 2015 International Rectifier Submit Datasheet Feedback March 11, 2015   IRFH8201PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) VGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient IDSS Drain-to-Source Leakage Current IGSS gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Cis...


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