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IRFI1010NPBF

Part Number	IRFI1010NPBF
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Mar 24, 2016
Detailed Description	l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4...
Datasheet	IRFI1010NPBF PDF File

Overview

l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.
5KVRMS l Sink to Lead Creepage Dist.
= 4.
8mm l Fully Avalanche Rated l Lead-Free G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.
This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance RθJC RθJA Parameter Junction-to-Case Junction-to-Ambient PD - 95418 IRFI1010NPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.
012Ω ID = 49A S TO-220 FULLPAK Max.
49 35 290 58 0.
38 ± 20 360 43 5.
8 5.
0 -55 to + 175 300 (1.
6mm from case ) 10 lbfin (1.
1Nm) Typ.
Max.
2.
6 65 Units A W W/°C V mJ A mJ V/ns °C Units °C/W 06/16/04 IRFI1010NPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs Parameter D...

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IRFI1010NPBF Power MOSFET - International Rectifier

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