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RFPA5026

RF Micro Devices
Part Number RFPA5026
Manufacturer RF Micro Devices
Description class AB Heterojunction Bipolar Transistor (HBT) power amplifier
Published Mar 25, 2016
Detailed Description RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: DFN, 6-pin, 5.59mm...
Datasheet PDF File RFPA5026 PDF File

RFPA5026
RFPA5026

Overview
RFPA5026 4.
9GHz to 5.
9GHz 2W InGaP AMPLIFIER RFPA5026 4.
9GHz TO 5.
9GHz 2W InGaP AMPLIFIER Package: DFN, 6-pin, 5.
59mm x 6.
23mm x 0.
85mm Vcc Features  P1dB=33dBm at 5V  802.
11g 54Mb/s Class AB Performance  POUT=25dBm at 2.
5% EVM, VCC 5V, 680mA  On-Chip Output Power Detector  Input Prematched Input and Output  Proprietary Low Thermal Resistance Package  Power Up/Down control <1s Applications  802.
16 WiMAX Driver or Output Stage  5GHz 802.
11 WiFi and ISM Applications RFIN RFPA5026 Vbias Active Bias RFOUT Power Up/Down Control Power Detector Functional Block Diagram Product Description RFMD’s RFPA5026 is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor (HBT) power amplifier.
It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.
This product is specifically designed for use as a driver or final stage power amp for 802.
16 equipment in the 4.
9GHz to 5.
9GHz bands.
...


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