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RFPA2226

RF Micro Devices
Part Number RFPA2226
Manufacturer RF Micro Devices
Description 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER
Published Mar 25, 2016
Detailed Description RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA2226 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features  P1...
Datasheet PDF File RFPA2226 PDF File

RFPA2226
RFPA2226

Overview
RFPA2226 2.
2GHz to 2.
7GHz 2W InGaP AMPLIFIER RFPA2226 2.
2GHz TO 2.
7GHz 2W InGaP AMPLIFIER Package: QFN Features  P1dB=33.
5dBm at 5V, 2.
4GHz  802.
11g 54Mb/s Class AB Performance  POUT=26dBm at 2.
5% EVM, VCC 5V  POUT=27dBm at 2.
5% EVM, VCC 6V  On-Chip Output Power Detector  Input Prematched to ~5  Proprietary Low Thermal Resistance Package  Hand Solderable and Easy Rework  Power Up/Down control <1s Applications  802.
16 WiMAX Driver or Output Stage  2.
4GHz 802.
11 WiFi and ISM Applications RFPA2226 Functional Block Diagram Product Description RFMD’s RFPA2226 is a high linearity single stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encapsulated package.
This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.
This product is specifically designed as a flexible final or driver stage for 802.
16 and 802.
11 equipment in...


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