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DMP1018UCB9

Diodes
Part Number DMP1018UCB9
Manufacturer Diodes
Description P-Channel MOSFET
Published Mar 25, 2016
Detailed Description AADDVVAANNCCEED ININENFFWOORPRRMMOAADTTIUIOCONTN Product Summary VDSS -12V RDS(on) 12mΩ Qg 4.9nC Qgd 1.1nC ID -7.6...
Datasheet PDF File DMP1018UCB9 PDF File

DMP1018UCB9
DMP1018UCB9

Overview
AADDVVAANNCCEED ININENFFWOORPRRMMOAADTTIUIOCONTN Product Summary VDSS -12V RDS(on) 12mΩ Qg 4.
9nC Qgd 1.
1nC ID -7.
6A Typ.
@ VGS = -4.
5V, TA = +25°C Description This 1st generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer.
Using Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(on) per footprint area.
Applications  DC-DC Converters  Battery Management  Load Switch DMP1018UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Features  LD-MOS technology with the lowest Figure of Merit: RDS(on) = 12mΩ to Minimize On-State Losses Qg = 4.
9nC for Ultr...


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