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HFW6N90

Part Number	HFW6N90
Manufacturer	SemiHow
Description	N-Channel MOSFET
Published	Mar 26, 2016
Detailed Description	HFW6N90_HFI6N90 March 2013 HFW6N90 / HFI6N90 900V N-Channel MOSFET FEATURES Originative New Design Superior Avalan...
Datasheet	HFW6N90 PDF File

Overview

HFW6N90_HFI6N90 March 2013 HFW6N90 / HFI6N90 900V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 1.
95 ȍ7\S#9GS=10V 100% Avalanche Tested BVDSS = 900 V RDS(on) typ = 1.
95 ȍ ID = 6.
0 A D2-PAK I2-PAK HFW6N90 HFI6N90 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚͑ ...

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HFW6N90 N-Channel MOSFET - SemiHow

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