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HGA40N120FV

SemiHow
Part Number HGA40N120FV
Manufacturer SemiHow
Description N-Channel MOSFET
Published Mar 26, 2016
Detailed Description HGA40N120FV HGA40N120FV 1200V Field Stop Trench IGBT FEATURES  1200V Field Stop Trench Technology  Low Saturation Vol...
Datasheet PDF File HGA40N120FV PDF File

HGA40N120FV
HGA40N120FV

Overview
HGA40N120FV HGA40N120FV 1200V Field Stop Trench IGBT FEATURES  1200V Field Stop Trench Technology  Low Saturation Voltage  High Switching Frequency  Very Soft, Fast Recovery Anti-parallel diode APPLICATION  Welding Converters  Uninterruptible Power Supply  General Purpose Inverters March 2015 VCES = 1200 V IC = 40 A VCE(sat) typ = 2.
0 V TO-247 GC E Absolute Maximum Ratings Symbol VCES IC ICM IF IFM VGES PD TJ, TSTG TL Parameter Collector-Emitter Voltage Collector Current Collector Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) Collector Current – Pulsed (Note 1) Diode Forward Current – Continuous (TC = 100℃) Diode Maximum Forward Current Gate-Emitter Voltage Power Dissipation Power Dissipation – Continuous (TC = 25℃) – Continuous (TC = 100℃) Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Notes: 1.
Pulse width limited by max junction temperature Thermal Resistance Characteristics Symbol RθJC(IGBT) RθJC(Diode) RθJA Parameter Junction-to-Case Junction-to-Case Junction-to-Ambient Value 1200 64 40 160 20 60 ±20 400 160 -55 to +150 300 Typ.
---- Max.
0.
31 1.
11 40 Units V A A A A A V W W ℃ ℃ Units ℃/W ◎ SEMIHOW REV.
A0,May 2014 HGA40N120FV Electrical Characteristics of the IGBT TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGE(th) Gate-Emitter Threshold Voltage VCE = VGE, IC = 1.
5 mA 4.
0 -- 7.
0 VCE(sat) Collector-Emitter Saturation Voltage VGE = 15 V, IC = 40 A TC = 25℃ TC = 125℃ --- 2.
0 2.
6 2.
5 -- V V Off Characteristics BVCES Collector-Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current IGES Gate-Emitter Leakage Current VGE = 0 V, IC = 250 uA VCE = 1200 V, VGE = 0 V VGE = ±20 V, VCE = 0 V 1200 -- -- V -- -- 1 mA -- -- ±250 ㎁ Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1.
0 ...


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