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HRD13N10K

Part Number	HRD13N10K
Manufacturer	SemiHow
Description	N-Channel MOSFET
Published	Mar 26, 2016
Detailed Description	HRD13N10K_HRU13N10K HRD13N10K / HRU13N10K 100V N-Channel Trench MOSFET FEATURES Originative New Design Superior Ava...
Datasheet	HRD13N10K PDF File

Overview

HRD13N10K_HRU13N10K HRD13N10K / HRU13N10K 100V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 20 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 85 Pȍ (Typ.
) @VGS=10V Lower RDS(ON) : 135 Pȍ (Typ.
) @VGS=4.
5V Built-in ESD Diode 100% Avalanche Tested Jan 2015 BVDSS = 100 V RDS(on) typ = 85 Pȍ ID = 3.
5 A D-PAK I-PAK 2 1 3 HRD13N10K 1 2 3 HRU13N10K 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 70୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Power Dissipation (TA = 25୅)* Power Dissipation (TC = 25୅) - Derate above 25୅ 100 3.
5 2.
8 14.
0 ρ16 40 3.
5 2.
5 37 0.
3 TJ, TSTG TL Operating and S...

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HRD13N10K N-Channel MOSFET - SemiHow

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